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Silicon Mono-crystalline Membranes

Thin silicon membranes provide an excellent alternative to silicon nitride when the presence of nitrogen is detrimental to the application.

All prices exclude VAT.
Name & Code
Grouped product items
Code & DescriptionAvailabilityPriceQty
AGS283-30
Silicon Mono-crystalline HEX TEM 200 um x 0.10 um x 30 um
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£404.73
£404.73
AGS283-50
Silicon Mono-crystalline HEX TEM 200 um x 0.10 um x 50 um
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£303.54
£303.54
AGS283-100
Silicon Mono-crystalline HEX TEM 200 um x 0.10 um x 100 um
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£202.36
£202.36
AGS283-200
Silicon Mono-crystalline HEX TEM 200 um x 0.10 um x 200 um
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£187.91
£187.91
AGS284-30
Silicon Mono-crystalline HEX TEM 200 um x 0.25 um x 30 um
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£404.73
£404.73
AGS284-50
Silicon Mono-crystalline HEX TEM 200 um x 0.25 um x 50 um
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£303.54
£303.54
AGS284-100
Silicon Mono-crystalline HEX TEM 200 um x 0.25 um x 100 um
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£202.36
£202.36
AGS284-200
Silicon Mono-crystalline HEX TEM 200 um x 0.25 um x 200 um
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£187.91
£187.91
AGS285-30
Silicon Mono-crystalline HEX TEM 200 um x 0.50 um x 30 um
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£404.73
£404.73
AGS285-50
Silicon Mono-crystalline HEX TEM 200 um x 0.50 um x 50 um
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£303.54
£303.54
AGS285-100
Silicon Mono-crystalline HEX TEM 200 um x 0.50 um x 100 um
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£202.36
£202.36
AGS285-200
Silicon Mono-crystalline HEX TEM 200 um x 0.50 um x 200 um
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£187.91
£187.91
AGS286-30
Silicon Mono-crystalline HEX TEM 200 um x 1 um x 30 um
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£404.73
£404.73
AGS286-50
Silicon Mono-crystalline HEX TEM 200 um x 1 um x 50 um
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£303.54
£303.54
AGS286-100
Silicon Mono-crystalline HEX TEM 200 um x 1 um x 100 um
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£202.36
£202.36
AGS286-200
Silicon Mono-crystalline HEX TEM 200 um x 1 um x 200 um
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£187.91
£187.91
Product Description

Thin silicon membranes provide an excellent alternative to silicon nitride when the presence of nitrogen is detrimental to the application. 

Mono-crystalline silicon membranes also offer higher transmission  in the soft x-ray / extreme ultraviolet (EUV) region. The silicon used to form these membranes is conductive, making them suitable for applications where a conductive sample support is required, such as minimising charging effects in electron microscopy. 

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