Silicon dioxide (Sio2)

Silicon wafers (4") with thin films of silicon dioxide are available in thicknesses of 23, 50, 97 and 102.9 nm.

All prices exclude VAT.

Description

Silicon wafers (4") with thin films of silicon dioxide are available in thicknesses of 23, 50, 97 and 102.9 nm. The oxide films are grown with a wet oxygen process, which ensures a higher degree of uniformity than other processes.

Description	Code	Stock	Unit	Price
Silicon Dioxide Ion Sputter Standard 23nm ± 0.23nm	AGS1804-1	Lead time: 14 days	EA	£1,140.00
Silicon Dioxide Ion Sputter Standard 50nm ± 2.5nm	AGS1804-2	Lead time: 14 days	EA	£1,140.00
Silicon Dioxide Ion Sputter Standard 97nm ± 3.8nm	AGS1804-3	Lead time: 14 days	EA	£1,140.00
Silicon Dioxide Ion Sputter Standard 103nm ± 2.5nm	AGS1804-4	Lead time: 14 days	EA	£1,140.00